AUIRFL024NTR
MOSFET N-CH 55V 2.8A SOT-223Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies AUIRFL024NTR, an N-Channel HEXFET® Power MOSFET, offers a 55V drain-source voltage and a continuous drain current of 2.8A at 25°C. This surface mount component is housed in a SOT-223 package and features a low on-resistance of 75mOhm maximum at 2.8A and 10V gate drive. Key parameters include a gate charge of 18.3 nC at 10V and input capacitance of 400 pF at 25V. The device operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 1W. Its robust construction and specifications make it suitable for applications in automotive and industrial sectors.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 2.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | SOT-223 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 18.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 400 pF @ 25 V |
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