AUIRFL024N
MOSFET N-CH 55V 2.8A SOT-223Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies AUIRFL024N is an N-Channel HEXFET® power MOSFET designed for high-efficiency switching applications. This component features a Drain-to-Source Voltage (Vdss) of 55V and a continuous drain current (Id) of 2.8A at 25°C. The low on-resistance (Rds On) of 75mOhm at 2.8A and 10V gate drive simplifies circuit design and reduces power loss. With a gate charge (Qg) of 18.3 nC maximum at 10V and an input capacitance (Ciss) of 400 pF maximum at 25V, it offers excellent switching performance. The SOT-223 package facilitates surface mounting and provides a maximum power dissipation of 1W at 25°C. Operating temperature range is -55°C to 150°C. This device finds application in automotive, industrial, and consumer electronics power management systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 2.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | SOT-223 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 18.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 400 pF @ 25 V |
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