AUIRFL014N
MOSFET N-CH 55V 1.5A SOT-223Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number AUIRFL014N, is designed for applications requiring efficient power switching. This device features a 55V drain-source breakdown voltage and a continuous drain current capability of 1.5A at 25°C ambient. The Rds(on) is specified at a maximum of 160mOhm when driven at 10V Vgs and carrying 1.9A. With a 1W maximum power dissipation in the SOT-223 package, it is suitable for demanding thermal environments. Key parameters include a gate charge (Qg) of 11 nC at 10V and input capacitance (Ciss) of 190 pF at 25V. The AUIRFL014N is designed for surface mounting and operates across a temperature range of -55°C to 150°C. This component is commonly utilized in automotive and industrial power management systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 1.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | SOT-223 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 190 pF @ 25 V |
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