AUIRFBA1405
MOSFET N-CH 55V 95A SUPER-220Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® AUIRFBA1405 is an N-Channel Power MOSFET designed for high-current applications. This component features a Drain-to-Source Voltage (Vdss) of 55V and a continuous Drain current (Id) capability of 95A at 25°C. With a low on-resistance (Rds On) of 5mOhm at 101A and 10V, it minimizes conduction losses. The device offers a maximum power dissipation of 330W (Tc) and is housed in a SUPER-220™ (TO-273AA) through-hole package, suitable for robust thermal management. Key parameters include a Gate Charge (Qg) of 260 nC (max) at 10V and an Input Capacitance (Ciss) of 5480 pF (max) at 25V. The operating temperature range is -40°C to 175°C (TJ). This MOSFET is utilized in demanding sectors such as automotive and industrial power systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-273AA |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 95A (Tc) |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 101A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 330W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | SUPER-220™ (TO-273AA) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 260 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5480 pF @ 25 V |
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