AUIRFB8407
MOSFET N-CH 40V 195A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® series AUIRFB8407 is an N-Channel Power MOSFET designed for high-current applications. This device features a 40 V drain-source breakdown voltage and a continuous drain current capability of 195 A at 25°C (Tc). With a low on-resistance of 2 mOhm at 100 A and 10 V Vgs, it minimizes conduction losses. The AUIRFB8407 offers a maximum power dissipation of 230 W (Tc) and operates across a wide temperature range of -55°C to 175°C (TJ). Key parameters include a gate charge (Qg) of 225 nC at 10 V and input capacitance (Ciss) of 7330 pF at 25 V. Supplied in a TO-220AB package for through-hole mounting, this MOSFET is suitable for automotive and industrial power systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 195A (Tc) |
| Rds On (Max) @ Id, Vgs | 2mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 230W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 150µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 225 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7330 pF @ 25 V |
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