AUIRFB3806
MOSFET N-CH 60V 43A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies AUIRFB3806 is a HEXFET® N-Channel Power MOSFET designed for high-performance applications. This device features a 60V drain-source breakdown voltage and a continuous drain current rating of 43A at 25°C (Tc). With a low on-resistance of 15.8mOhm maximum at 25A and 10V Vgs, it offers efficient power handling with a maximum power dissipation of 71W (Tc). The AUIRFB3806 utilizes MOSFET technology and is housed in a TO-220AB through-hole package. Key parameters include a gate charge of 30nC at 10V and input capacitance of 1150pF at 50V. Operating temperature ranges from -55°C to 175°C (TJ). This component is suitable for automotive and industrial power management systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 43A (Tc) |
| Rds On (Max) @ Id, Vgs | 15.8mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 71W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 50µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1150 pF @ 50 V |
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