AUIRF8739L2TR
MOSFET N-CH 40V 57A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number AUIRF8739L2TR, offers robust performance for demanding applications. This DirectFET™ Isometric L8 packaged device features a 40 V Drain-Source Voltage (Vdss) and a continuous drain current capability of 57 A at 25°C ambient, scaling to 545 A at 25°C case temperature. With a low Rds(on) of 0.6 mOhms at 195 A and 10 Vgs, it minimizes conduction losses. The device boasts a maximum gate charge of 562 nC at 10 V and input capacitance of 17890 pF at 25 V. Its high power dissipation of 3.8 W (Ta) and 340 W (Tc) along with an operating temperature range of -55°C to 175°C make it suitable for automotive and industrial power management systems. This component is supplied on tape and reel.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 98 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric L8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 57A (Ta), 545A (Tc) |
| Rds On (Max) @ Id, Vgs | 0.6mOhm @ 195A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 340W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 250µA |
| Supplier Device Package | DirectFET™ Isometric L8 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | 40V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 562 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 17890 pF @ 25 V |
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