AUIRF7805Q
MOSFET N-CH 30V 13A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies AUIRF7805Q is an N-Channel HEXFET® power MOSFET designed for demanding applications. This component features a 30V drain-source voltage and a continuous drain current of 13A at 25°C. With a low on-resistance of 11mOhm at 7A and 4.5V Vgs, it minimizes conduction losses. The device boasts a gate charge of 31 nC at 5V, facilitating efficient switching. Packaged in an 8-SOIC (0.154", 3.90mm width) format, the AUIRF7805Q offers a maximum power dissipation of 2.5W. Its robust design is suitable for automotive, industrial, and power management systems. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 7A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 5 V |
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