AUIRF7769L2TR
MOSFET N-CH 100V 375A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® AUIRF7769L2TR is a high-performance N-Channel Power MOSFET designed for demanding applications. This DirectFET™ Isometric L8 packaged device offers a Drain-to-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 375A at 25°C (Tc). It features a low on-resistance (Rds On) of 3.5mOhm maximum at 74A and 10V gate drive. The device boasts a maximum gate charge of 300 nC at 10V and input capacitance (Ciss) of 11560 pF at 25V. With a maximum power dissipation of 125W (Tc), it operates across a temperature range of -55°C to 175°C. This MOSFET is suitable for automotive, industrial, and power supply applications requiring robust switching performance.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric L8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 375A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.5mOhm @ 74A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.3W (Ta), 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DirectFET™ Isometric L8 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 300 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11560 pF @ 25 V |
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