AUIRF7759L2TR
MOSFET N-CH 75V 375A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies HEXFET® AUIRF7759L2TR is a high-performance N-Channel power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 75V and a continuous Drain Current (Id) of 375A at 25°C (Tc), with a maximum Rds(On) of 2.3mOhm at 96A and 10V drive. Optimized for efficient power handling, it offers a power dissipation of 125W at 25°C (Tc). Key electrical parameters include a Gate Charge (Qg) of 300 nC (Max) at 10V and an input capacitance (Ciss) of 12222 pF (Max) at 25V. The AUIRF7759L2TR utilizes the DirectFET™ Isometric L8 surface mount package, providing excellent thermal performance. Operating across a temperature range of -55°C to 175°C (TJ), this MOSFET is suitable for automotive and industrial power systems. It is supplied in Tape & Reel packaging.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric L8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 375A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.3mOhm @ 96A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.3W (Ta), 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DirectFET™ Isometric L8 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 300 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 12222 pF @ 25 V |
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