AUIRF7739L2
MOSFET N-CH 40V 46A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies AUIRF7739L2 is an N-Channel HEXFET® Power MOSFET designed for high-current applications. This DirectFET™ Isometric L8 packaged component features a Drain-to-Source Voltage (Vdss) of 40V and a continuous drain current (Id) of 46A at 25°C ambient, with a pulsed drain current capability of 270A at 25°C case. The low on-resistance of 1mOhm at 160A and 10V drive voltage, coupled with a maximum gate charge (Qg) of 330 nC at 10V, ensures efficient switching performance. With a maximum power dissipation of 3.8W (Ta) and 125W (Tc), and an operating junction temperature range of -55°C to 175°C, the AUIRF7739L2 is suitable for demanding automotive and industrial power management systems. This component is typically utilized in applications requiring robust power switching, such as motor control and power distribution.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric L8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 46A (Ta), 270A (Tc) |
| Rds On (Max) @ Id, Vgs | 1mOhm @ 160A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DirectFET™ Isometric L8 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 330 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11880 pF @ 25 V |
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