AUIRF7738L2TR
MOSFET N-CH 40V 35A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® AUIRF7738L2TR is an N-Channel MOSFET designed for high-current switching applications. This component features a 40V drain-to-source voltage (Vdss) and continuous drain current capabilities of 35A at ambient temperature and 130A at case temperature. The device exhibits a low on-resistance of 1.6mOhm at 109A and 10V gate-source voltage (Vgs). Key parameters include a maximum gate charge (Qg) of 194 nC at 10V and input capacitance (Ciss) of 7471 pF at 25V. With a maximum power dissipation of 3.3W (Ta) and 94W (Tc), this MOSFET is suitable for demanding environments operating between -55°C and 175°C. Packaged in a DirectFET™ Isometric L6 and supplied on tape and reel (TR), the AUIRF7738L2TR is utilized in automotive, industrial power control, and high-density power conversion systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric L6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Ta), 130A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.6mOhm @ 109A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.3W (Ta), 94W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DIRECTFET L6 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 194 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7471 pF @ 25 V |
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