AUIRF7737L2TR
MOSFET N-CH 40V 31A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® AUIRFI7737L2TR is an N-Channel Power MOSFET designed for high-performance applications. This device features a Drain-to-Source Voltage (Vdss) of 40V and a continuous Drain Current (Id) of 31A at 25°C ambient, scaling to 156A at 25°C case temperature. The low on-resistance (Rds On) of 1.9mOhm at 94A and 10V gate drive ensures efficient power handling. With a maximum power dissipation of 3.3W (ambient) and 83W (case), this MOSFET is suitable for demanding thermal environments. Key parameters include a Gate Charge (Qg) of 134 nC at 10V and an Input Capacitance (Ciss) of 5469 pF at 25V. The AUIRF7737L2TR utilizes the DirectFET™ Isometric L6 package for surface mounting, offering excellent thermal performance and compact footprint. It operates across a temperature range of -55°C to 175°C. This component is widely employed in automotive, industrial power control, and high-efficiency power conversion systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric L6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 31A (Ta), 156A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.9mOhm @ 94A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.3W (Ta), 83W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 150µA |
| Supplier Device Package | DIRECTFET L6 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 134 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5469 pF @ 25 V |
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