AUIRF7736M2TR
MOSFET N-CH 40V 22A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® MOSFET N-Channel, part number AUIRFR7736M2TR, offers a 40V drain-source voltage and 22A continuous drain current at 25°C ambient, with a 108A continuous drain current at 25°C case temperature. This device boasts a low 3mOhm maximum Rds(on) at 65A and 10V gate drive voltage. Key parameters include a 108 nC maximum gate charge at 10V and 4267 pF maximum input capacitance at 25V. The AUIRFR7736M2TR is housed in a DirectFET™ Isometric M4 surface mount package, suitable for demanding applications with a wide operating temperature range of -55°C to 175°C. Power dissipation is rated at 2.5W ambient and 63W case. This component finds application in automotive and industrial power systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric M4 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Ta), 108A (Tc) |
| Rds On (Max) @ Id, Vgs | 3mOhm @ 65A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 63W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 150µA |
| Supplier Device Package | DirectFET™ Isometric M4 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 108 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4267 pF @ 25 V |
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