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AUIRF7732S2TR

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AUIRF7732S2TR

MOSFET N-CH 40V 14A DIRECTFET SC

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies' AUIRFU7732S2TR is an N-Channel HEXFET® power MOSFET featuring a 40V drain-source voltage and a continuous drain current of 14A at 25°C ambient. This component offers a low on-resistance of 6.95mOhm at 33A and 10V gate-source voltage, optimized for high-efficiency switching applications. The DIRECTFET™ Isometric SC package facilitates efficient thermal management, with a maximum power dissipation of 2.5W (ambient) and 41W (case). Key electrical characteristics include a gate charge of 45nC at 10V and input capacitance of 1700pF at 25V. Operating across a temperature range of -55°C to 175°C, this MOSFET is suitable for automotive and industrial power electronics applications. The component is supplied in Tape & Reel packaging.

Additional Information

Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseDirectFET™ Isometric SC
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C14A (Ta)
Rds On (Max) @ Id, Vgs6.95mOhm @ 33A, 10V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id4V @ 50µA
Supplier Device PackageDIRECTFET™ SC
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1700 pF @ 25 V

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