AUIRF7675M2TR
MOSFET N-CH 150V 4.4A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies HEXFET® AUIRF7675M2TR is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 150 V and a continuous drain current capability of 4.4 A at 25°C ambient and 18 A at 25°C case temperature. Its low on-resistance (Rds On) of 56 mOhm maximum at 11 A and 10 V gate drive ensures efficient power transfer. The device boasts a maximum power dissipation of 2.7 W (Ta) and 45 W (Tc). With a gate charge (Qg) of 32 nC maximum at 10 V and input capacitance (Ciss) of 1360 pF maximum at 25 V, it offers robust switching performance. The AUIRF7675M2TR is housed in a Surface Mount DirectFET™ Isometric M2 package and supplied on tape and reel, suitable for high-volume manufacturing in automotive and industrial power management systems. It operates across a junction temperature range of -55°C to 175°C.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric M2 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.4A (Ta), 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 56mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.7W (Ta), 45W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 100µA |
| Supplier Device Package | DirectFET™ Isometric M2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1360 pF @ 25 V |
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