AUIRF7669L2TR
MOSFET N-CH 100V 19A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® AUIRF7669L2TR is a high-performance N-Channel Power MOSFET designed for demanding applications. This device features a Drain-Source Voltage (Vdss) of 100V and a continuous drain current capability of 19A at 25°C ambient (114A at 25°C case temperature). The AUIRF7669L2TR offers a low on-resistance of 4.4mOhm maximum at 68A and 10V gate drive. With a maximum gate charge of 120 nC at 10V and an input capacitance (Ciss) of 5660 pF maximum at 25V, it facilitates efficient switching. The device provides a maximum power dissipation of 3.3W at 25°C ambient and 100W at 25°C case temperature. Packaged in a DirectFET™ Isometric L8 for surface mounting and supplied on tape and reel, this MOSFET is suitable for automotive and industrial power management systems. It operates within an extended temperature range of -55°C to 175°C.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric L8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Ta), 114A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.4mOhm @ 68A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.3W (Ta), 100W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | DirectFET™ Isometric L8 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5660 pF @ 25 V |
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