AUIRF7665S2TR
MOSFET N-CH 100V 4.1A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® AUIRFU7665S2TR is a high-performance N-Channel MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 100V and a continuous drain current capability of 4.1A at 25°C ambient and 14.4A at 25°C case temperature. With a maximum On-Resistance (Rds On) of 62mOhm at 8.9A and 10V gate drive, it offers efficient switching. The device boasts a low gate charge of 13 nC at 10V and an input capacitance (Ciss) of 515 pF at 25V. Rated for a maximum power dissipation of 2.4W (Ta) and 30W (Tc), with an operating junction temperature range of -55°C to 175°C, it is suitable for automotive and industrial power management systems. The AUIRFU7665S2TR utilizes Infineon's advanced MOSFET technology and is supplied in a DirectFET™ Isometric SB package, available on tape and reel.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric SB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.1A (Ta), 14.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 62mOhm @ 8.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.4W (Ta), 30W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 25µA |
| Supplier Device Package | DIRECTFET SB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 515 pF @ 25 V |
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