AUIRF7648M2TR
MOSFET N-CH 60V 14A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel MOSFET, part number AUIRFI7648M2TR, is designed for demanding power applications. This DirectFET™ Isometric M4 packaged device offers a 60V drain-source breakdown voltage and supports a continuous drain current of 14A at 25°C ambient or 68A at 25°C case temperature. With a low on-resistance of 7 mOhm maximum at 41A and 10V gate drive, this MOSFET minimizes conduction losses. It features a typical gate charge of 53 nC and input capacitance of 2170 pF. Power dissipation capabilities reach 2.5W ambient or 63W case. The AUIRFI7648M2TR is suitable for applications in automotive and industrial sectors where high efficiency and robust performance are critical. Operating temperature range is -55°C to 175°C.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric M4 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Ta), 68A (Tc) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 41A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 63W (Tc) |
| Vgs(th) (Max) @ Id | 4.9V @ 150µA |
| Supplier Device Package | DirectFET™ Isometric M4 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 53 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2170 pF @ 25 V |
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