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AUIRF7647S2TR

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AUIRF7647S2TR

MOSFET N-CH 100V 5.9A DIRECTFET

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Infineon Technologies AUIRFU7647S2TR is a HEXFET® N-Channel power MOSFET designed for high-density power applications. This device features a 100V drain-source breakdown voltage and offers a continuous drain current of 5.9A at 25°C ambient or 24A at 25°C case temperature. With a maximum Rds(on) of 31mOhm at 14A and 10V Vgs, it ensures efficient power transfer. The AUIRFU7647S2TR is packaged in a DirectFET™ Isometric SC surface-mount package, facilitating thermal management with a power dissipation of 2.5W (Ta) and 41W (Tc). Its typical applications span automotive, industrial, and high-performance computing sectors where robust and efficient switching characteristics are paramount. Key parameters include a gate charge (Qg) of 21 nC at 10V, input capacitance (Ciss) of 910 pF at 25V, and a gate-source voltage (Vgs) range of ±20V. The operating junction temperature range is -55°C to 175°C.

Additional Information

Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseDirectFET™ Isometric SC
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C5.9A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs31mOhm @ 14A, 10V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id5V @ 50µA
Supplier Device PackageDIRECTFET™ SC
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds910 pF @ 25 V

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