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AUIRF7640S2TR

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AUIRF7640S2TR

MOSFET N-CH 60V 5.8A DIRECTFET

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies HEXFET® AUIRFU7640S2TR is an N-Channel MOSFET designed for high-performance applications. This component features a 60V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 5.8A at 25°C ambient, scaling to 21A at 25°C case temperature. The device offers a low on-resistance (Rds On) of 36mOhm maximum at 13A and 10V gate-source voltage. With a maximum power dissipation of 2.4W (Ta) and 30W (Tc), and an operating temperature range of -55°C to 175°C, it is suitable for demanding thermal environments. Key electrical parameters include a gate charge (Qg) of 11 nC maximum at 10V and input capacitance (Ciss) of 450 pF maximum at 25V. The DIRECTFET™ Isometric SB package facilitates surface mounting and is supplied on tape and reel. This MOSFET is utilized in automotive and industrial power management systems.

Additional Information

Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseDirectFET™ Isometric SB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C5.8A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs36mOhm @ 13A, 10V
FET Feature-
Power Dissipation (Max)2.4W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id5V @ 25µA
Supplier Device PackageDIRECTFET SB
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds450 pF @ 25 V

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