AUIRF7484QTR
MOSFET N CH 40V 14A 8-SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies AUIRFR7484QTR is an N-Channel HEXFET® Power MOSFET designed for high-efficiency switching applications. This component features a Drain-to-Source Voltage (Vdss) of 40 V and a continuous Drain Current (Id) of 14 A at 25°C. Its low on-resistance (Rds On) of 10 mOhm at 14 A and 7 V gate drive voltage ensures minimal conduction losses. The device offers a gate charge (Qg) of 100 nC at 7 V and an input capacitance (Ciss) of 3520 pF at 25 V. With a maximum power dissipation of 2.5 W (Ta) and an operating temperature range of -55°C to 150°C (TJ), it is suitable for demanding environments. The AUIRFR7484QTR is supplied in an 8-SOIC package, suitable for surface mounting, and is delivered on tape and reel. This MOSFET is commonly employed in automotive, industrial power control, and high-power DC-DC converter designs.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Ta) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 14A, 7V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 7V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 7 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3520 pF @ 25 V |
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