AUIRF7416QTR
MOSFET P-CH 30V 10A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® P-Channel MOSFET, part number AUIRFI7416QTR, is a surface-mount device in an 8-SOIC package. This component features a Drain-to-Source Voltage (Vdss) of 30V and a continuous drain current (Id) of 10A at 25°C, with a maximum power dissipation of 2.5W. The Rds On is specified at a maximum of 20mOhm at 5.6A and 10V Vgs. With a gate charge (Qg) of 92 nC at 10V and input capacitance (Ciss) of 1700 pF at 25V, this MOSFET is suitable for automotive and industrial applications. It operates across a temperature range of -55°C to 150°C.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 5.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 2.04V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 92 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1700 pF @ 25 V |
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