AUIRF7207QTR
MOSFET P-CH 20V 5.4A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies AUIRFI7207QTR is a P-Channel HEXFET® power MOSFET designed for high-efficiency switching applications. This component features a 20V Drain-Source Voltage (Vdss) and a continuous drain current (Id) of 5.4A at 25°C, with a maximum power dissipation of 2.5W. The On-Resistance (Rds On) is specified at 60mOhm maximum at 5.4A and 4.5V gate-source voltage.
The device offers a low gate charge (Qg) of 22 nC maximum at 4.5V and an input capacitance (Ciss) of 780 pF maximum at 15V. It supports gate drive voltages between 2.7V and 4.5V, with a maximum Vgs rating of ±12V. The threshold voltage (Vgs(th)) is 1.6V at 250µA.
Packaged in an 8-SOIC (0.154", 3.90mm Width) surface mount configuration, supplied on tape and reel (TR), the AUIRFI7207QTR operates across a temperature range of -55°C to 150°C. This MOSFET is commonly utilized in automotive, industrial, and consumer electronics sectors.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.4A (Ta) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 5.4A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 1.6V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 2.7V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 780 pF @ 15 V |
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