AUIRF6218STRL
MOSFET P-CH 150V 27A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® P-channel Power MOSFET, part number AUIRF6218STRL. This device features a drain-to-source voltage (Vdss) of 150 V and a continuous drain current (Id) of 27 A at 25°C (Tc). The on-resistance (Rds On) is a maximum of 150 mOhm at 16 A and 10 V gate drive. With a maximum power dissipation of 250 W (Tc), this TO-263-3, D2PAK surface mount component is suitable for high-power switching applications. Key parameters include a gate charge (Qg) of 110 nC at 10 V and input capacitance (Ciss) of 2210 pF at 25 V. The operating temperature range is -55°C to 175°C. This component is commonly utilized in automotive and industrial power control systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 27A (Tc) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2210 pF @ 25 V |
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