AUIRF6218S
MOSFET P-CH 150V 27A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies AUIRF6218S is a P-Channel HEXFET® power MOSFET designed for high-performance applications. This component features a Drain-to-Source Voltage (Vdss) of 150V and a continuous Drain Current (Id) of 27A (Tc) at 25°C. The on-resistance (Rds On) is a maximum of 150mOhm at 16A and 10V gate drive. With a maximum power dissipation of 250W (Tc), it is suitable for demanding thermal environments. The gate charge (Qg) is 110 nC maximum at 10V, and input capacitance (Ciss) is 2210 pF maximum at 25V. The AUIRF6218S is packaged in a TO-263-3, D2PAK (PG-TO263-3) surface mount package, facilitating efficient board layout. Operating temperature ranges from -55°C to 175°C (TJ). This MOSFET is commonly utilized in automotive and industrial power management systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 27A (Tc) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2210 pF @ 25 V |
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