AUIRF6215S
MOSFET P-CH 150V 13A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies AUIRF6215S is a P-Channel HEXFET® power MOSFET designed for high-efficiency power switching applications. This device features a Drain-to-Source Voltage (Vdss) of 150 V and a continuous Drain Current (Id) of 13 A at 25°C (Tc). The AUIRF6215S offers a maximum On-Resistance (Rds On) of 290 mOhm at 6.6 A and 10 V, with a Gate-to-Source Voltage (Vgs) tolerance up to ±20 V. Key parameters include a Gate Charge (Qg) of 66 nC (max) and an Input Capacitance (Ciss) of 860 pF (max) at 25 V. This MOSFET is packaged in a TO-263-3, D2PAK (TO-263AB) surface mount package, allowing for thermal management with a maximum power dissipation of 110 W (Tc) and 3.8 W (Ta). Operating temperatures range from -55°C to 175°C (TJ). This component is suitable for automotive and industrial applications requiring robust power handling.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Rds On (Max) @ Id, Vgs | 290mOhm @ 6.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 110W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 66 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 860 pF @ 25 V |
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