AUIRF540ZXKMA1
MOSFET_(75V 120V(Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies AUIRF540ZXKMA1 is an N-Channel HEXFET® power MOSFET designed for automotive applications. This component features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 36A at 25°C. With a maximum Power Dissipation of 92W (Tc), it offers a low On-Resistance (Rds On) of 26.5mOhm at 22A and 10V. Key parameters include an input capacitance (Ciss) of 1770pF at 25V and a gate charge (Qg) of 63nC at 10V. The device operates within a temperature range of -55°C to 175°C (TJ) and is qualified to AEC-Q101 standards. It is available in a PG-TO220-3-904 package, suitable for through-hole mounting. This MOSFET is utilized in demanding automotive power management and switching applications.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
| Rds On (Max) @ Id, Vgs | 26.5mOhm @ 22A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 92W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PG-TO220-3-904 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1770 pF @ 25 V |
| Qualification | AEC-Q101 |
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