AUIRF5210S
MOSFET P-CH 100V 38A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® AUIRF5210S is a P-Channel power MOSFET designed for high-efficiency switching applications. This component features a drain-to-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 38 A at 25°C (Tc). The on-resistance (Rds On) is specified at a maximum of 60 mOhm at 38 A and 10 V gate-source voltage. With a gate charge (Qg) of 230 nC at 10 V and input capacitance (Ciss) of 2780 pF at 25 V, it offers robust performance characteristics. Thermal specifications include a maximum power dissipation of 3.1 W (Ta) and 170 W (Tc). The AUIRF5210S is packaged in a TO-263-3, D2PAK (2 Leads + Tab) surface mount configuration, suitable for demanding environments within automotive and industrial power management systems. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 38A (Tc) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 38A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 170W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 230 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2780 pF @ 25 V |
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