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AUIRF4905STRL

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AUIRF4905STRL

MOSFET P-CH 55V 42A D2PAK

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies AUIRF4905STRL is a P-channel MOSFET from the HEXFET® series. This automotive-grade component features a Drain-Source Voltage (Vdss) of 55V and a continuous Drain Current (Id) of 42A at 25°C (Tc). The Rds On is specified at a maximum of 20mOhm at 42A and 10V gate drive. With a maximum power dissipation of 200W (Tc), this device is suitable for demanding applications. The input capacitance (Ciss) is 3500 pF at 25V, and gate charge (Qg) is 180 nC at 10V. The AUIRF4905STRL is supplied in a TO-263-3, D2PAK package, designed for surface mounting and qualified to AEC-Q101 standards. Its robust construction and performance characteristics make it a strong candidate for power management solutions in the automotive sector.

Additional Information

Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C42A (Tc)
Rds On (Max) @ Id, Vgs20mOhm @ 42A, 10V
FET Feature-
Power Dissipation (Max)200W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackagePG-TO263-3
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)55 V
Gate Charge (Qg) (Max) @ Vgs180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3500 pF @ 25 V
QualificationAEC-Q101

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