AUIRF4905
MOSFET P-CH 55V 74A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies AUIRFU4905 is a P-Channel MOSFET designed for high-current switching applications. This HEXFET® component features a Drain-Source Voltage (Vdss) of 55 V and a continuous Drain Current (Id) of 74 A at 25°C (Tc). The device exhibits a low On-Resistance (Rds On) of 20 mOhm at 38 A and 10 V, and a maximum power dissipation of 200 W (Tc). Key parameters include a Gate Charge (Qg) of 180 nC at 10 V and input capacitance (Ciss) of 3400 pF at 25 V. The AUIRFU4905 is packaged in a TO-220AB through-hole configuration, operating across a temperature range of -55°C to 175°C. This component finds application in automotive and industrial power management systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 74A (Tc) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 38A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 200W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3400 pF @ 25 V |
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