AUIRF4104
MOSFET N-CH 40V 75A TO220Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies AUIR4104 is an N-Channel HEXFET® Power MOSFET designed for high-efficiency power switching applications. This component features a 40 V drain-source breakdown voltage and a continuous drain current capability of 75 A at 25°C case temperature, with a maximum power dissipation of 140 W (Tc). The low on-resistance of 5.5 mOhm at 75 A and 10 V gate drive voltage, combined with a typical gate charge of 100 nC, ensures optimal performance in demanding power conversion circuits. The AUIR4104 is housed in a standard TO-220 package for through-hole mounting, facilitating integration into various power supply designs, motor control systems, and automotive electronics. Operating temperature ranges from -55°C to 175°C.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3000 pF @ 25 V |
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