AUIRF3805STRL
MOSFET N-CH 55V 160A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® series N-Channel Power MOSFET, part number AUIRLF3805STRL. This component features a Drain-to-Source Voltage (Vdss) of 55 V and a continuous Drain Current (Id) of 160 A (Tc). The device offers a low on-resistance (Rds On) of 3.3 mOhm at 75 A and 10 V, with a maximum Gate Charge (Qg) of 290 nC at 10 V. Input capacitance (Ciss) is 7960 pF at 25 V. The AUIRLF3805STRL is packaged in a D2PAK (TO-263-3, D2PAK) surface mount configuration, supplied on tape and reel. With a maximum power dissipation of 300 W (Tc) and an operating temperature range of -55°C to 175°C (TJ), this MOSFET is suitable for high-power applications in automotive and industrial sectors.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 160A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.3mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 290 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7960 pF @ 25 V |
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