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AUIRF3805S-7TRL

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AUIRF3805S-7TRL

MOSFET N-CH 55V 160A D2PAK

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies HEXFET® AUIRF3805S-7TRL is a high-performance N-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 55 V and a continuous drain current (Id) capability of 160 A at 25°C (Tc). The device exhibits a low on-resistance (Rds On) of 2.6 mOhm at 140 A and 10 V Vgs, ensuring efficient power transfer. With a maximum power dissipation of 300 W (Tc) and a wide operating temperature range of -55°C to 175°C, it is suitable for high-power switching and motor control applications in automotive and industrial sectors. The TO-263-7, D2PAK package facilitates surface mounting, and the component is supplied on a tape and reel for automated assembly. Key electrical parameters include a gate charge (Qg) of 200 nC at 10 V and an input capacitance (Ciss) of 7820 pF at 25 V.

Additional Information

Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C160A (Tc)
Rds On (Max) @ Id, Vgs2.6mOhm @ 140A, 10V
FET Feature-
Power Dissipation (Max)300W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageD2PAK (7-Lead)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)55 V
Gate Charge (Qg) (Max) @ Vgs200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds7820 pF @ 25 V

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