AUIRF3805S-7P
MOSFET N-CH 55V 160A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® AUIRFI3805S-7P is an N-Channel Power MOSFET designed for high-current applications. This component features a 55V drain-source voltage (Vdss) and a continuous drain current (Id) of 160A at 25°C. The AUIRFI3805S-7P offers a low on-resistance (Rds On) of 2.6mOhm at 140A and 10V gate drive. With a maximum power dissipation of 300W (Tc), this device is suitable for demanding power conversion tasks. Key electrical parameters include a gate charge (Qg) of 200 nC at 10V and input capacitance (Ciss) of 7820 pF at 25V. The device operates within a temperature range of -55°C to 175°C. The AUIRFI3805S-7P utilizes a TO-263-7, D2PAK package for surface mounting. This MOSFET is commonly found in automotive and industrial power management systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab), TO-263CB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 160A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.6mOhm @ 140A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK (7-Lead) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 200 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7820 pF @ 25 V |
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