AUIRF3805L-7P
MOSFET N-CH 55V 160A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® AUIRF3805L-7P is an N-Channel MOSFET with a Drain-to-Source Voltage (Vdss) of 55 V. It offers a continuous drain current (Id) of 160 A at 25°C (Tc) and a maximum power dissipation of 300 W (Tc). The device features a low on-resistance (Rds On) of 2.6 mOhm at 140 A and 10 V gate drive voltage, with a gate charge (Qg) of 200 nC at 10 V. Input capacitance (Ciss) is rated at a maximum of 7820 pF at 25 V. This through-hole component is housed in a TO-262-7 package and operates across a temperature range of -55°C to 175°C (TJ). It is suitable for automotive and industrial applications requiring high current switching capabilities.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-7 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 160A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.6mOhm @ 140A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 200 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7820 pF @ 25 V |
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