AUIRF3305
MOSFET N-CH 55V 140A TO220Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® AUIRFU3305 is a high-performance N-Channel power MOSFET designed for demanding applications. This component offers a 55V drain-source voltage (Vdss) and a continuous drain current capability of 140A at 25°C (Tc), with a maximum power dissipation of 330W (Tc). The AUIRFU3305 features an ultra-low on-resistance (Rds On) of 8mOhm at 75A and 10V, minimizing conduction losses. Its gate charge (Qg) is rated at 150 nC at 10V, and input capacitance (Ciss) is 3650 pF at 25V. The device is packaged in a TO-220-3 through-hole configuration, suitable for robust thermal management. Operating temperature range is -55°C to 175°C (TJ). This MOSFET is commonly utilized in automotive and industrial power conversion systems, including electric vehicle powertrains and power supplies.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 140A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 330W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3650 pF @ 25 V |
Request a Quote
Clients Also Buy
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
