AUIRF3205
MOSFET N-CH 55V 75A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies AUIRF3205 is a HEXFET® N-Channel Power MOSFET designed for high-performance applications. This through-hole component features a Drain-Source Voltage (Vdss) of 55V and a continuous Drain Current (Id) of 75A at 25°C (Tc). The device exhibits a low on-resistance (Rds On) of 8mOhm maximum at 62A and 10V gate drive. With a maximum power dissipation of 200W (Tc) and a wide operating temperature range of -55°C to 175°C (TJ), the AUIRF3205 is suitable for demanding power conversion and motor control circuits across automotive and industrial sectors. Key electrical characteristics include a gate charge (Qg) of 146 nC maximum at 10V and an input capacitance (Ciss) of 3247 pF maximum at 25V. The component is supplied in a TO-220AB package.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 62A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 200W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 146 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3247 pF @ 25 V |
Request a Quote
Clients Also Buy
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
