AUIRF3004WL
MOSFET N-CH 40V 240A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® AUIRF3004WL is a high-performance N-Channel Power MOSFET designed for demanding applications. This component features a 40V drain-source voltage and a continuous drain current capability of 240A at 25°C, with a maximum power dissipation of 375W. The extremely low on-resistance of 1.4mOhm at 195A and 10V gate drive voltage, coupled with a gate charge of 210nC at 10V, ensures efficient power transfer. Boasting a high junction temperature rating of 175°C and a TO-262-3 Wide Leads surface mount package, the AUIRF3004WL is suitable for use in automotive, industrial power supplies, and motor control systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Wide Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 240A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4mOhm @ 195A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 375W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262-3 Wide |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 210 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9450 pF @ 32 V |
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