AUIRF2907Z
MOSFET N-CH 75V 75A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies AUIRF2907Z is an N-Channel MOSFET from the HEXFET® series, housed in a TO-220AB package. This component features a Drain-Source Voltage (Vdss) of 75V and a continuous Drain current (Id) of 75A at 25°C (Tc). The AUIRF2907Z offers a low on-resistance of 4.5mOhm at 75A and 10V gate-source voltage (Vgs), with a maximum power dissipation of 300W (Tc). Key parameters include a Gate Charge (Qg) of 270 nC at 10V Vgs and an Input Capacitance (Ciss) of 7500 pF at 25V Vds. The device operates across a temperature range of -55°C to 175°C (TJ) and supports a maximum Vgs of ±20V. This MOSFET is suitable for applications in automotive and industrial power management.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 270 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7500 pF @ 25 V |
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