AUIRF2903ZSTRL
MOSFET N-CH 30V 160A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® AUIRF2903ZSTRL is a high-performance N-Channel Power MOSFET designed for demanding applications. This device features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 160A at 25°C (Tc), with a maximum power dissipation of 231W (Tc). The low on-resistance (Rds On) of 2.4mOhm at 75A and 10V drive voltage ensures efficient power transfer. Key parameters include a gate charge (Qg) of 240 nC at 10V and an input capacitance (Ciss) of 6320 pF at 25V. The AUIRF2903ZSTRL is housed in a surface-mount D2PAK package (TO-263-3, D2PAK) and operates across a wide temperature range of -55°C to 175°C (TJ). Its robust characteristics make it suitable for use in automotive, industrial power supplies, and electric vehicle systems. The component is supplied in Tape & Reel packaging.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 160A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.4mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 231W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 150µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 240 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6320 pF @ 25 V |
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