AUIRF2903ZS
MOSFET N-CH 30V 160A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies AUIRF2903ZS, an N-Channel HEXFET® Power MOSFET, offers a 30V drain-source voltage rating and a continuous drain current capability of 160A at 25°C (Tc). This device features a low on-resistance of 2.4mOhm at 75A and 10V (Vgs), with a maximum power dissipation of 231W (Tc). The gate charge is rated at 240 nC (max) at 10V, and input capacitance (Ciss) is 6320 pF (max) at 25V. Designed for surface mounting in the TO-263-3, D2PAK package, the AUIRF2903ZS operates across a temperature range of -55°C to 175°C. This component is suitable for applications in automotive and industrial power systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 160A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.4mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 231W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 150µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 240 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6320 pF @ 25 V |
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