AUIRF2805S
MOSFET N-CH 55V 135A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® series N-Channel Power MOSFET, part number AUIRF2805S, offers a 55V drain-to-source voltage and a continuous drain current of 135A at 25°C (Tc). This device features a low on-resistance of 4.7mOhm at 104A and 10V gate drive voltage. With a maximum power dissipation of 200W (Tc), it is designed for demanding applications. The AUIRF2805S utilizes advanced MOSFET technology and comes in a surface-mount D2PAK package (TO-263-3, D2PAK). Key electrical parameters include a gate charge of 230 nC at 10V and input capacitance of 5110 pF at 25V. It operates across a temperature range of -55°C to 175°C (TJ). This component is commonly found in automotive and industrial power management systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 135A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.7mOhm @ 104A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 200W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 230 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5110 pF @ 25 V |
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