AUIRF2804WL
MOSFET N-CH 40V 240A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies AUIRFI R F2804WL is a HEXFET® N-Channel Power MOSFET designed for demanding applications. This component features a 40V drain-to-source voltage (Vdss) and can handle a continuous drain current of 240A at 25°C, with a maximum power dissipation of 300W. The low on-resistance (Rds On) of 1.8mOhm at 187A and 10V drive voltage ensures high efficiency. Key parameters include a gate charge (Qg) of 225 nC at 10V and an input capacitance (Ciss) of 7978 pF at 25V. The device operates across a wide temperature range of -55°C to 175°C (TJ). Packaged in a TO-262-3 Wide Leads (through-hole mounting), the AUIRF2804WL is suitable for automotive, industrial power control, and high-current switching applications.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Wide Leads |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 240A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.8mOhm @ 187A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262-3 Wide |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 225 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7978 pF @ 25 V |
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