AUIRF2804STRL7P
MOSFET N-CH 40V 240A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® AUIRFR2804STRL7P is a high-efficiency N-Channel power MOSFET designed for demanding applications. This component features a 40V drain-source voltage (Vdss) and a continuous drain current (Id) of 240A at 25°C (Tc), with a maximum power dissipation of 330W (Tc). The low on-resistance (Rds On) of 1.6mOhm at 160A and 10V gate-source voltage (Vgs) minimizes conduction losses. It operates with a gate drive voltage up to 10V and has a maximum Vgs of ±20V. The AUIRFR2804STRL7P is housed in a D2PAK (TO-263-7) surface mount package, supplied on tape and reel. Key electrical characteristics include a maximum gate charge (Qg) of 260 nC at 10V and an input capacitance (Ciss) of 6930 pF at 25V. This MOSFET is suitable for use in automotive and industrial power conversion systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab), TO-263CB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 240A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.6mOhm @ 160A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 330W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK (7-Lead) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 260 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6930 pF @ 25 V |
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