AUIRF2804S
MOSFET N-CH 40V 195A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies AUIRFUIRF2804S is an N-Channel HEXFET® Power MOSFET. This component features a 40V drain-to-source breakdown voltage and supports a continuous drain current of 195A at 25°C (Tc). The device offers a low on-resistance of 2mOhm at 75A and 10V Vgs, with a maximum power dissipation of 300W (Tc). Key electrical characteristics include a gate charge (Qg) of 240 nC @ 10V and input capacitance (Ciss) of 6450 pF @ 25V. It is designed for surface mounting in the TO-263-3, D2PAK package. The AUIRFUIRF2804S is suitable for high-power applications across various industries, including automotive and industrial power management. It operates within a temperature range of -55°C to 175°C (TJ).
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 195A (Tc) |
| Rds On (Max) @ Id, Vgs | 2mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 240 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6450 pF @ 25 V |
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