AUIRF2804L-313
MOSFET N-CH 40V 195A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies AUIRF2804L-313, a HEXFET® N-Channel Power MOSFET, features a 40V drain-source voltage and 195A continuous drain current at 25°C (Tc). This AEC-Q101 qualified component offers a maximum on-resistance of 2.3mOhm at 75A and 10V gate-source voltage. With a power dissipation of 300W (Tc) and a gate charge of 240nC at 10V, the AUIRF2804L-313 is designed for demanding applications. It is packaged in a TO-262-3 Long Leads, I2PAK, TO-262AA through-hole mount configuration. Operating temperature ranges from -55°C to 175°C (TJ). This device is suitable for automotive applications.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 195A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.3mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 240 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6450 pF @ 25 V |
| Qualification | AEC-Q101 |
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