AUIRF1405ZSTRL
MOSFET N-CH 55V 150A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies AUIRF1405ZSTRL is a HEXFET® N-Channel Power MOSFET designed for high-current applications. This component features a 55V drain-source voltage (Vdss) and a continuous drain current (Id) of 150A at 25°C, with a maximum power dissipation of 230W (Tc). The Rds On is specified at a maximum of 4.9mOhm at 75A and 10V gate drive voltage. Key parameters include a gate charge (Qg) of 180 nC @ 10V and input capacitance (Ciss) of 4780 pF @ 25V. The device is housed in a TO-263-3, D2PAK package, suitable for surface mounting and supplied on tape and reel. Operating temperature ranges from -55°C to 175°C (TJ), making it robust for demanding environments. This MOSFET is commonly utilized in automotive and industrial power management systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 150A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.9mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 230W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4780 pF @ 25 V |
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