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AUIRF1405ZS-7TRL

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AUIRF1405ZS-7TRL

MOSFET N-CH 55V 120A D2PAK

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies AUIRF1405ZS-7TRL is an N-Channel HEXFET® power MOSFET designed for high-current automotive applications. This component features a Drain-to-Source Voltage (Vdss) of 55V and a continuous drain current (Id) of 120A at 25°C (Tc). With a low on-resistance (Rds On) of 4.9mOhm at 88A and 10V, it minimizes conduction losses. The device offers a maximum power dissipation of 230W (Tc) and is packaged in a D2PAK (7-Lead) surface-mount configuration suitable for automated assembly. Key electrical characteristics include a gate charge (Qg) of 230 nC at 10V and input capacitance (Ciss) of 5360 pF at 25V. Operating temperature ranges from -55°C to 175°C (TJ). This MOSFET is commonly utilized in automotive power management, motor control, and electric vehicle systems.

Additional Information

Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Rds On (Max) @ Id, Vgs4.9mOhm @ 88A, 10V
FET Feature-
Power Dissipation (Max)230W (Tc)
Vgs(th) (Max) @ Id4V @ 150µA
Supplier Device PackageD2PAK (7-Lead)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)55 V
Gate Charge (Qg) (Max) @ Vgs230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5360 pF @ 25 V

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