AUIRF1405ZS-7P
MOSFET N-CH 55V 120A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® AUIRF1405ZS-7P is an N-channel power MOSFET designed for high-efficiency power switching applications. This component features a drain-source voltage (Vds) of 55V and a continuous drain current (Id) of 120A at 25°C. The low on-resistance (Rds On) of 4.9mOhm at 88A and 10V gate-source voltage (Vgs) minimizes conduction losses. With a maximum power dissipation of 230W (Tc), it is suitable for demanding thermal environments. The device is housed in a TO-263-7, D2PAK (7-Lead) surface-mount package, facilitating efficient board layout. Key parameters include a gate charge (Qg) of 230 nC at 10V and input capacitance (Ciss) of 5360 pF at 25V. This MOSFET is utilized in automotive, industrial, and power supply sectors.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab), TO-263CB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.9mOhm @ 88A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 230W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 150µA |
| Supplier Device Package | D2PAK (7-Lead) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 230 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5360 pF @ 25 V |
Request a Quote
Clients Also Buy
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
